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IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ . Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCH
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 3.3 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
(TO-220)
(TO-3P & TO-247)
35
58
4000
410
60
14
25
47
25
78
19
22
0.50
0.25
0.31
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
° C/W
° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ . Max.
I S
I SM
V SD
t rr
I RM
Q RM
Note:
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
I F = 25A, -di/dt = 250A/ μ s
V R = 100V, V GS = 0V
1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
166
23
1.9
50
200
1.5
A
A
V
ns
A
μ C
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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